Type 2N3485A
Geometry
0600
Polarity PNP
Qual Level: JAN - JANTXV
Data Sheet No. 2N3485A
Generic Part Number:
2N3485A
REF: MIL-PRF-19500/392
Features:
General-purpose transistor for
switching and amplifier applica-
tons.
Housed in a
TO-46
case.
Also available in chip form using
the
0600
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/392
which
Semicoa meets in all cases.
The Typ values are actual batch
averages for Semicoa.
Radiation Graphs available.
Rating
Symbol
Rating
Unit
Collector-Emitter Voltage
V
CEO
60
V
Collector-Base Voltage
V
CBO
60
V
Emitter-Base Voltage
V
EBO
5.0
V
Collector Current, Continuous
I
C
600
mA
Operating Junction Temperature
T
J
-55 to +200
o
C
Storage Temperature
T
STG
-55 to +200
o
C
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
TO-46
Data Sheet No. 2N3485A
OFF Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
I
C
= 10 A
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
E
= 10 A, pulsed
Collector-Base Cutoff Current
V
CB
= 50 V
Emitter-Base Cutoff Current
V
EB
= 3.5 V
nA
nA
V
Electrical Characteristics
T
C
= 25
o
C unless otherwise specified
V
V
V
(BR)CBO
60
---
100
V
(BR)CEO
60
---
70
V
(BR)EBO
5.0
---
9.0
I
EBO
---
50
0.1
I
CBO
---
10
0.25
ON Characteristics
Symbol
Min
Typ
Max
Unit
Forward Current Transfer Ratio
I
C
= 100 A, V
CE
= 10 V
h
FE1
40
225
---
---
I
C
= 1.0 mA, V
CE
= 10 V
h
FE2
40
250
---
---
I
C
= 10 mA, V
CE
= 10 V
h
FE3
40
---
---
---
I
C
= 150 mA, V
CE
= 10 V (pulse test)
h
FE4
40
---
120
---
I
C
= 500 mA, V
CE
= 10 V (pulse test)
h
FE5
40
80
---
---
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
V
CE(sat)1
---
0.18
0.4
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
CE(sat)2
---
0.5
1.6
V dc
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA (pulse test)
V
BE(sat)1
---
0.87
1.3
V dc
I
C
= 500 mA, I
B
= 50 mA (pulse test)
V
BE(sat)2
---
1.0
2.6
V dc
Small Signal Characteristics
Symbol
Min
Typ
Max
Unit
Short Circuit Forward Current Transfer Ratio
I
C
= 1 mA, V
CE
= 10 V, f = 1 kHz
Open Circuit Output Capacitance
V
CB
= 10 V, I
E
= 0 V, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
V
EB
= 2.0 V, I
C
= 0, 100 kHz < f < 1 MHz
pF
C
OBO
---
6.0
8.0
pF
h
FE
40
250
---
C
IBO
---
8.0
30
---
Switching Characteristics
Symbol
Min
Typ
Max
Unit
Saturated Turn On Switching Time to 90%
16V, 50 ohm input pulse
Saturated Turn Off Switching Time to 10%
16V, 50 ohm input pulse
ns
t
OFF
---
175
175
ns
t
ON
---
25
45
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